HGTP10N120BN

производитель :

ON Semiconductor

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

35A

Current - Collector Pulsed (Icm) :

80A

Gate Charge :

100nC

IGBT Type :

NPT

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Not For New Designs

Power - Max :

298W

Reverse Recovery Time (trr) :

-

Series :

-

Supplier Device Package :

TO-220AB

Switching Energy :

320µJ (on), 800µJ (off)

Td (on/off) @ 25°C :

23ns/165ns

Test Condition :

960V, 10A, 10 Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Voltage - Collector Emitter Breakdown (Max) :

1200V