HGTP7N60B3D

производитель :

ON Semiconductor

категория продукта :

Транзисторы - IGBT - Single

Current - Collector (Ic) (Max) :

14A

Current - Collector Pulsed (Icm) :

56A

Gate Charge :

23nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-220-3

Packaging :

Tube

Part Status :

Obsolete

Power - Max :

60W

Reverse Recovery Time (trr) :

37ns

Series :

-

Supplier Device Package :

TO-220AB

Switching Energy :

160µJ (on), 120µJ (off)

Td (on/off) @ 25°C :

26ns/130ns

Test Condition :

480V, 7A, 50 Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 7A

Voltage - Collector Emitter Breakdown (Max) :

600V