NSBC123JPDP6T5G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-963

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

339mW

Resistor - Base (R1) :

2.2 kOhms

Resistor - Emitter Base (R2) :

47 kOhms

Series :

-

Supplier Device Package :

SOT-963

Transistor Type :

2 NPN - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V