NSVBCW68GLT1G

производитель :

ON Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - одиночные

Current - Collector (Ic) (Max) :

800mA

Current - Collector Cutoff (Max) :

20nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 10mA, 1V

Frequency - Transition :

100MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape & Reel (TR)

Part Status :

Active

Power - Max :

225mW

Series :

-

Supplier Device Package :

SOT-23-3 (TO-236)

Transistor Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

700mV @ 50mA, 500mA

Voltage - Collector Emitter Breakdown (Max) :

45V