EMB51T2R

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые

Current - Collector (Ic) (Max) :

30mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA, 10V

Frequency - Transition :

250MHz

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Packaging :

Cut Tape (CT)

Part Status :

Active

Power - Max :

150mW

Resistor - Base (R1) :

22 kOhms

Resistor - Emitter Base (R2) :

22 kOhms

Series :

-

Supplier Device Package :

EMT6

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V