IMB7AT108

производитель :

Rohm Semiconductor

категория продукта :

Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-457

Packaging :

Tape & Reel (TR)

Part Status :

Not For New Designs

Power - Max :

300mW

Resistor - Base (R1) :

4.7 kOhms

Resistor - Emitter Base (R2) :

-

Series :

-

Supplier Device Package :

SOT-457

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :

50V