НЕТ ЦЕНЫ
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- производитель :
- Toshiba Semiconductor and Storage
- категория продукта :
- Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power - Max :
- 100mW
- Resistor - Base (R1) :
- 22 kOhms
- Resistor - Emitter Base (R2) :
- 22 kOhms
- Series :
- -
- Supplier Device Package :
- ES6
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheet :
- RN1963FE(TE85L,F)
Перекрестные ссылки
-
Акции 3,708
-
Акции 1,473
-
Акции 2,748
-
Акции 1,675
-
Акции 3,414
ЛЮДИ, КОТОРЫЕ БЫВАЮТ Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые ТАКЖЕ БУГТТ
-
Акции 2,930
-
Акции 2,717
-
Акции 1,032
-
Акции 1,278
-
Акции 3,495
ПРОСМОТР ЛЮДЕЙ RN1963FE(TE85L,F) THEN BOUGHT
-
Акции 2,486
-
Акции 2,867
-
Акции 3,771
-
Акции 695
-
Акции 1,658
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Последние новости
05/13/2019
05/13/2019
05/09/2019
Номер поискового запроса RN19 Включено слово 15
| номер части | производитель | Акции | Описание |
|---|---|---|---|
| RN1907,LF | Toshiba Semiconductor and Storage | 3,708 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1907,LF | Toshiba Semiconductor and Storage | 1,473 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1907,LF | Toshiba Semiconductor and Storage | 2,748 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1906,LF | Toshiba Semiconductor and Storage | 1,675 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1906,LF | Toshiba Semiconductor and Storage | 3,414 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1906,LF | Toshiba Semiconductor and Storage | 1,758 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1905,LF | Toshiba Semiconductor and Storage | 3,867 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1905,LF | Toshiba Semiconductor and Storage | 2,304 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1905,LF | Toshiba Semiconductor and Storage | 942 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1965(TE85L,F) | Toshiba Semiconductor and Storage | 1,958 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1965(TE85L,F) | Toshiba Semiconductor and Storage | 3,724 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1965(TE85L,F) | Toshiba Semiconductor and Storage | 3,644 | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1911(T5L,F,T) | Toshiba Semiconductor and Storage | 3,658 | TRANS 2NPN PREBIAS 0.1W US6 |
| RN1911(T5L,F,T) | Toshiba Semiconductor and Storage | 3,318 | TRANS 2NPN PREBIAS 0.1W US6 |
| RN1911(T5L,F,T) | Toshiba Semiconductor and Storage | 2,220 | TRANS 2NPN PREBIAS 0.1W US6 |
Связанные ключевые слова "RN1963FE(TE85L,F)"
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