НЕТ ЦЕНЫ
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- производитель :
- Toshiba Semiconductor and Storage
- категория продукта :
- Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 10mA, 5V
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-553
- Packaging :
- Cut Tape (CT)
- Part Status :
- Discontinued at Digi-Key
- Power - Max :
- 100mW
- Resistor - Base (R1) :
- 47 kOhms
- Resistor - Emitter Base (R2) :
- 22 kOhms
- Series :
- -
- Supplier Device Package :
- ESV
- Transistor Type :
- 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheet :
- RN2709JE(TE85L,F)
Перекрестные ссылки
-
Акции 3,067
-
Акции 2,518
-
Акции 1,346
-
Акции 1,247
-
Акции 2,914
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ЛЮДИ, КОТОРЫЕ БЫВАЮТ Транзисторы - биполярные (BJT) - массивы, предварительно предвзятые ТАКЖЕ БУГТТ
-
Акции 2,930
-
Акции 2,717
-
Акции 1,032
-
Акции 1,278
-
Акции 3,495
ПРОСМОТР ЛЮДЕЙ RN2709JE(TE85L,F) THEN BOUGHT
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Акции 2,486
-
Акции 2,867
-
Акции 3,771
-
Акции 695
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Акции 1,658
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Последние новости
05/13/2019
05/13/2019
05/09/2019
Номер поискового запроса RN27 Включено слово 15
| номер части | производитель | Акции | Описание |
|---|---|---|---|
| RN2706JE(TE85L,F) | Toshiba Semiconductor and Storage | 3,067 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2706JE(TE85L,F) | Toshiba Semiconductor and Storage | 2,518 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2702TE85LF | Toshiba Semiconductor and Storage | 1,346 | TRANS 2PNP PREBIAS 0.2W USV |
| RN2702TE85LF | Toshiba Semiconductor and Storage | 1,247 | TRANS 2PNP PREBIAS 0.2W USV |
| RN2702TE85LF | Toshiba Semiconductor and Storage | 2,914 | TRANS 2PNP PREBIAS 0.2W USV |
| RN2703JE(TE85L,F) | Toshiba Semiconductor and Storage | 2,198 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2703JE(TE85L,F) | Toshiba Semiconductor and Storage | 634 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2703JE(TE85L,F) | Toshiba Semiconductor and Storage | 2,740 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2711(TE85L,F) | Toshiba Semiconductor and Storage | 890 | TRANS 2PNP PREBIAS 0.2W USV |
| RN2711(TE85L,F) | Toshiba Semiconductor and Storage | 3,460 | TRANS 2PNP PREBIAS 0.2W USV |
| RN2711(TE85L,F) | Toshiba Semiconductor and Storage | 2,641 | TRANS 2PNP PREBIAS 0.2W USV |
| RN2713JE(TE85L,F) | Toshiba Semiconductor and Storage | 2,117 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2713JE(TE85L,F) | Toshiba Semiconductor and Storage | 2,392 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2713JE(TE85L,F) | Toshiba Semiconductor and Storage | 2,447 | TRANS 2PNP PREBIAS 0.1W ESV |
| RN2712JE(TE85L,F) | Toshiba Semiconductor and Storage | 720 | TRANS 2PNP PREBIAS 0.1W ESV |
Связанные ключевые слова "RN2709JE(TE85L,F)"
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